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US07951663B2 Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer 有权
使用平滑导电层和底侧导电层形成IPD结构的半导体器件和方法

  • Patent Title: Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
  • Patent Title (中): 使用平滑导电层和底侧导电层形成IPD结构的半导体器件和方法
  • Application No.: US12472170
    Application Date: 2009-05-26
  • Publication No.: US07951663B2
    Publication Date: 2011-05-31
  • Inventor: Yaojian Lin
  • Applicant: Yaojian Lin
  • Applicant Address: SG Singapore
  • Assignee: STATS ChipPAC, Ltd.
  • Current Assignee: STATS ChipPAC, Ltd.
  • Current Assignee Address: SG Singapore
  • Agency: Patent Law Group
  • Agent Robert D. Atkins
  • Main IPC: H01L21/8244
  • IPC: H01L21/8244
Semiconductor device and method of forming IPD structure using smooth conductive layer and bottom-side conductive layer
Abstract:
A semiconductor device is made by forming a smooth conductive layer over a substrate. A first insulating layer is formed over a first surface of the smooth conductive layer. A first conductive layer is formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and first conductive layer. The substrate is removed. A second conductive layer is formed over a second surface of the smooth conductive layer opposite the first surface of the smooth conductive layer. A third insulating layer is formed over the second conductive layer. The second conductive layer, smooth conductive layer, first insulating layer, and first conductive layer constitute a MIM capacitor. A portion of the second conductive layer includes an inductor. The smooth conductive layer has a smooth surface to reduce particles and hill-locks which decreases ESR, increases Q factor, and increases ESD of the MIM capacitor.
Abstract(Chinese):

通过在衬底上形成平滑的导电层来制造半导体器件。 在平滑导电层的第一表面上形成第一绝缘层。 在第一绝缘层上形成第一导电层。 在第一绝缘层和第一导电层上形成第二绝缘层。 去除衬底。 第二导电层形成在平滑导电层的与光滑导电层的第一表面相对的第二表面上。 在第二导电层上形成第三绝缘层。 第二导电层，平滑导电层，第一绝缘层和第一导电层构成MIM电容器。 第二导电层的一部分包括电感器。 平滑的导电层具有光滑的表面，以减少减少ESR的颗粒和山锁，增加Q因子，并增加MIM电容器的ESD。

Public/Granted literature
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Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8239 ........存储器结构
H01L21/8244 .........静态随机存取存储结构（SRAM）
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