Invention Grant
- Patent Title: Integrated circuit system employing an elevated drain
- Patent Title (中): 集成电路系统采用升高的漏极
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Application No.: US12262120Application Date: 2008-10-30
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Publication No.: US07951680B2Publication Date: 2011-05-31
- Inventor: Guowei Zhang , Yisuo Li , Ming Li , Purakh Raj Verma , Shao-fu Sanford Chu
- Applicant: Guowei Zhang , Yisuo Li , Ming Li , Purakh Raj Verma , Shao-fu Sanford Chu
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agent Mikio Ishimaru
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method for manufacturing an integrated circuit system that includes: providing a substrate including an active device; forming a drift region in the substrate, the drift region bounded in part by a top surface of the substrate and spaced apart from a source; and forming a drain above the drift region.
Public/Granted literature
- US20100109097A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAIN Public/Granted day:2010-05-06
Information query
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