Invention Grant
- Patent Title: Methods for simultaneously forming N-type and P-type doped regions using non-contact printing processes
- Patent Title (中): 使用非接触印刷方法同时形成N型和P型掺杂区的方法
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Application No.: US12241396Application Date: 2008-09-30
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Publication No.: US07951696B2Publication Date: 2011-05-31
- Inventor: Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
- Applicant: Roger Yu-Kwan Leung , Anil Bhanap , Zhe Ding , Nicole Rutherford , Wenya Fan
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L21/22
- IPC: H01L21/22

Abstract:
Methods for simultaneously forming doped regions of opposite conductivity using non-contact printing processes are provided. In one exemplary embodiment, a method comprises the steps of depositing a first liquid dopant comprising first conductivity-determining type dopant elements overlying a first region of a semiconductor material and depositing a second liquid dopant comprising second conductivity-determining type dopant elements overlying a second region of the semiconductor material. The first conductivity-determining type dopant elements and the second conductivity-determining type dopant elements are of opposite conductivity. At least a portion of the first conductivity-determining type dopant elements and at least a portion of the second conductivity-determining type dopant elements are simultaneously diffused into the first region and into the second region, respectively.
Public/Granted literature
- US20100081264A1 METHODS FOR SIMULTANEOUSLY FORMING N-TYPE AND P-TYPE DOPED REGIONS USING NON-CONTACT PRINTING PROCESSES Public/Granted day:2010-04-01
Information query
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