Invention Grant
- Patent Title: Differential pressure sensing device and fabricating method therefor
- Patent Title (中): 差压传感装置及其制造方法
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Application No.: US11892240Application Date: 2007-08-21
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Publication No.: US07952153B2Publication Date: 2011-05-31
- Inventor: Jung-Tai Chen , Chun-Hsun Chu , Wen-Lo Shieh
- Applicant: Jung-Tai Chen , Chun-Hsun Chu , Wen-Lo Shieh
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: TW95150069A 20061229
- Main IPC: H01L29/84
- IPC: H01L29/84 ; H01L21/56

Abstract:
At least one differential pressure sensing device has an active surface with an active region and a back surface with a recess. Next, a sacrificial layer is formed on a surface of the active region. Then, the differential pressure sensing device is bonded and electrically coupled with a surface of a carrier that has at least one through-hole corresponding to the recess of the differential pressure sensing device. Afterwards, at least one molding compound is formed to encapsulate the carrier and differential pressure sensing device while exposing the through-hole region and an upper surface of the sacrificial layer. Then, a solvent is used to naturally decompose the sacrificial layer, such that the active region of the differential pressure sensing device is exposed to atmosphere, thereby forming a differential pressure sensing device package with the through-hole.
Public/Granted literature
- US20080157236A1 Differential pressure sensing device and fabricating method therefor Public/Granted day:2008-07-03
Information query
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