Invention Grant
US07952174B2 Method and apparatus providing air-gap insulation between adjacent conductors using nanoparticles
有权
使用纳米颗粒在相邻导体之间提供气隙绝缘的方法和装置
- Patent Title: Method and apparatus providing air-gap insulation between adjacent conductors using nanoparticles
- Patent Title (中): 使用纳米颗粒在相邻导体之间提供气隙绝缘的方法和装置
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Application No.: US12473849Application Date: 2009-05-28
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Publication No.: US07952174B2Publication Date: 2011-05-31
- Inventor: Nishant Sinha , Gurtej Sandhu , Neil Greeley , John Smythe
- Applicant: Nishant Sinha , Gurtej Sandhu , Neil Greeley , John Smythe
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A semiconductor device and a method of forming it are disclosed in which at least two adjacent conductors have an air-gap insulator between them which is covered by nanoparticles of insulating material being a size which prevent the nanoparticles from substantially entering into the air-gap.
Public/Granted literature
- US20100301462A1 METHOD AND APPARATUS PROVIDING AIR-GAP INSULATION BETWEEN ADJACENT CONDUCTORS USING NANOPARTICLES Public/Granted day:2010-12-02
Information query
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