Invention Grant
- Patent Title: Piezoelectric thin-film resonator
- Patent Title (中): 压电薄膜谐振器
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Application No.: US12368801Application Date: 2009-02-10
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Publication No.: US07952257B2Publication Date: 2011-05-31
- Inventor: Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda
- Applicant: Masafumi Iwaki , Tokihiro Nishihara , Masanori Ueda
- Applicant Address: JP Tokyo
- Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee: Taiyo Yuden Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Arent Fox LLP
- Priority: JP2008-038926 20080220
- Main IPC: H01L41/047
- IPC: H01L41/047 ; H03H9/13

Abstract:
There is provided a piezoelectric thin-film resonator including a substrate, a lower electrode disposed on the substrate, a piezoelectric film disposed on the lower electrode, an upper electrode disposed on the piezoelectric film in such a manner that a portion of the upper electrode is opposed to the lower electrode, and a mass element disposed on the upper electrode in a portion of an edge of the region of the upper electrode in which the upper electrode and the lower electrode are opposed to each other.
Public/Granted literature
- US20090206706A1 PIEZOELECTRIC THIN-FILM RESONATOR Public/Granted day:2009-08-20
Information query
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