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US07952378B2 Tunable stress technique for reliability degradation measurement 有权
可靠性降解测量的可调压力技术

Tunable stress technique for reliability degradation measurement
Abstract:
Apparatus and methods are disclosed for examining how reliability in an RF power amplifier circuit changes as a function of variation of the input to output voltage swings. Two output transistors that varying greatly in the size of their respective channel widths are provided for independently evaluating impacts on the output waveform. The gate control for the smaller transistor is separate from the gate control to the larger transistor. The gate and drain stress can thus be adjusted and evaluated independently.
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