Invention Grant
- Patent Title: Tunable stress technique for reliability degradation measurement
- Patent Title (中): 可靠性降解测量的可调压力技术
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Application No.: US12358510Application Date: 2009-01-23
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Publication No.: US07952378B2Publication Date: 2011-05-31
- Inventor: Andrew Marshall , Vijay Kumar Reddy
- Applicant: Andrew Marshall , Vijay Kumar Reddy
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
Apparatus and methods are disclosed for examining how reliability in an RF power amplifier circuit changes as a function of variation of the input to output voltage swings. Two output transistors that varying greatly in the size of their respective channel widths are provided for independently evaluating impacts on the output waveform. The gate control for the smaller transistor is separate from the gate control to the larger transistor. The gate and drain stress can thus be adjusted and evaluated independently.
Public/Granted literature
- US20100164531A1 TUNABLE STRESS TECHNIQUE FOR RELIABILITY DEGRADATION MEASUREMENT Public/Granted day:2010-07-01
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