Invention Grant
US07953135B2 Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency
有权
垂直腔表面发射激光二极管(VCSEL),具有增强的发射效率
- Patent Title: Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency
- Patent Title (中): 垂直腔表面发射激光二极管(VCSEL),具有增强的发射效率
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Application No.: US12230445Application Date: 2008-08-28
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Publication No.: US07953135B2Publication Date: 2011-05-31
- Inventor: Yutaka Onishi
- Applicant: Yutaka Onishi
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, GAmbrell & Russell, LLP
- Priority: JPP2007-226578 20070831
- Main IPC: H01S3/08
- IPC: H01S3/08

Abstract:
A vertical cavity surface emitting laser diode (VCSEL) is disclosed, which reduces the light scattering by the step formed at the interface between the dielectric DBR and the semiconductor that reflects the mesa shape of the tunnel junction. The dielectric DBR of the invention includes a plurality of first films with relatively smaller refractive index and a plurality of second films with relatively larger refractive index. These first and second films are alternately stacked to each other to cause the periodic structure of the refractive indices. The VCSEL of the invention, different from the conventional device, provides the dielectric film with relatively larger refractive index that directly comes in contact with the semiconductor to set the node of the optical standing wave at the interface between the dielectric DBR and the semiconductor.
Public/Granted literature
- US20090080487A1 Vertical cavity surface emitting laser diode (VCSEL) with enhanced emitting efficiency Public/Granted day:2009-03-26
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