Invention Grant
- Patent Title: Method of plasma etching transition metal oxides
- Patent Title (中): 等离子体蚀刻过渡金属氧化物的方法
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Application No.: US11681022Application Date: 2007-03-01
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Publication No.: US07955515B2Publication Date: 2011-06-07
- Inventor: Usha Raghuram , Michael W. Konevecki
- Applicant: Usha Raghuram , Michael W. Konevecki
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: C03C15/00
- IPC: C03C15/00
Abstract:
A method of plasma etching transition metal oxide thin films using carbon monoxide as the primary source gas. This permits carbonyl chemistries to be used at ambient temperature, without heating.
Public/Granted literature
- US20070295690A1 Method of Plasma Etching Transition Metal Oxides Public/Granted day:2007-12-27
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