Disclosed herein is a method of correcting defects in photomasks. According to one embodiment, a light absorption layer is formed on a photomask where pin hole defects occur in a light blocking layer, and light absorption patterns are formed on the pin hole defect portions by selectively etching the light absorption layer. According to another embodiment, a light absorption layer is formed on a backside of a photomask having pin hole defects in a light blocking layer, and light absorption patterns are formed on the backside of the photomask substrate corresponding to a region having pin hole defects by etching the light absorption layer.