Invention Grant
US07955761B2 Exposure mask, pattern formation method, and exposure mask fabrication method
失效
曝光掩模，图案形成方法和曝光掩模制造方法
- Patent Title: Exposure mask, pattern formation method, and exposure mask fabrication method
- Patent Title (中): 曝光掩模，图案形成方法和曝光掩模制造方法
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Application No.: US12212843Application Date: 2008-09-18
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Publication No.: US07955761B2Publication Date: 2011-06-07
- Inventor: Tadao Yasuzato
- Applicant: Tadao Yasuzato
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc
- Current Assignee: Elpida Memory, Inc
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2007-246965 20070925
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03C5/00
Abstract:
An exposure mask has a rectangular pattern, an auxiliary pattern, a translucent region, and a shielding region. The rectangular pattern includes a transparent region having a dimension equal to or greater than a critical resolution of exposure light. The auxiliary pattern is arranged around the rectangular pattern and includes a transparent region having a dimension smaller than the critical resolution. The translucent region is arranged between the rectangular pattern and the auxiliary pattern for shifting a phase of light transmitted through the rectangular pattern and the auxiliary pattern to an opposite phase. The shielding region is arranged around the auxiliary pattern.
Public/Granted literature
- US20090081564A1 EXPOSURE MASK, PATTERN FORMATION METHOD, AND EXPOSURE MASK FABRICATION METHOD Public/Granted day:2009-03-26
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