Invention Grant
US07955870B2 Dry etch stop process for eliminating electrical shorting in MRAM device structures
有权
用于消除MRAM器件结构中电气短路的干蚀刻停止工艺
- Patent Title: Dry etch stop process for eliminating electrical shorting in MRAM device structures
- Patent Title (中): 用于消除MRAM器件结构中电气短路的干蚀刻停止工艺
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Application No.: US12552664Application Date: 2009-09-02
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Publication No.: US07955870B2Publication Date: 2011-06-07
- Inventor: Robert A. Ditizio
- Applicant: Robert A. Ditizio
- Applicant Address: US AZ Gilbert
- Assignee: OEM Group Inc.
- Current Assignee: OEM Group Inc.
- Current Assignee Address: US AZ Gilbert
- Agency: Polsinelli Shughart PC
- Agent Christine Meis McAuliffe
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates generally to semiconductor fabrication and particularly to fabricating magnetic tunnel junction devices. In particular, this invention relates to a method for using the dielectric layer in tunnel junctions as an etch stop layer to eliminate electrical shorting that can result from the patterning process.
Public/Granted literature
- US20100022030A1 DRY ETCH STOP PROCESS FOR ELIMINATING ELECTRICAL SHORTING IN MRAM DEVICE STRUCTURES Public/Granted day:2010-01-28
Information query
IPC分类:
