Invention Grant
US07955877B2 Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation
有权
通过将非易失性存储器暴露于重离子辐射来模拟非易失性存储器的长期性能的方法
- Patent Title: Method for simulating long-term performance of a non-volatile memory by exposing the non-volatile memory to heavy-ion radiation
- Patent Title (中): 通过将非易失性存储器暴露于重离子辐射来模拟非易失性存储器的长期性能的方法
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Application No.: US12405308Application Date: 2009-03-17
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Publication No.: US07955877B2Publication Date: 2011-06-07
- Inventor: Mohammed Suhail , Ko-Min Chang , Peter J. Kuhn , Erwin J. Prinz
- Applicant: Mohammed Suhail , Ko-Min Chang , Peter J. Kuhn , Erwin J. Prinz
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent James L. Clingan, Jr.; David G. Dolezal
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/66
Abstract:
Testing a non volatile memory by exposing the non volatile memory to particle radiation (e.g. xenon ions) to emulate memory cell damage due to data state changing events of a non volatile memory cell. After the exposing, the memory cells are subjected to tests and the results of the tests are used to develop reliability indications of the non volatile memory. Integrated circuits with non volatile memories of the same design are provided. Reliability representations of the integrated circuits can be made with respect to a number of data state charging events based on the exposure and subsequent tests.
Public/Granted literature
- US20100240156A1 METHOD FOR PROVIDING A NON-VOLATILE MEMORY Public/Granted day:2010-09-23
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