Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
-
Application No.: US12643871Application Date: 2009-12-21
-
Publication No.: US07955878B2Publication Date: 2011-06-07
- Inventor: Mitsunori Harada
- Applicant: Mitsunori Harada
- Applicant Address: JP Tokyo
- Assignee: Stanley Electric Co., Ltd.
- Current Assignee: Stanley Electric Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Kenealy Vaidya LLP
- Priority: JP2004-106643 20040331
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A semiconductor light emitting device can include a casing having a concave-shaped cavity with an opening, a semiconductor light emitting element installed in a bottom portion of the cavity, and a resin layer for filling an interior of the cavity. The resin layer can include a wavelength conversion material, and can be formed in a convex shape in a light radiation direction of the light emitting element. In the resin layer a layer with a high density of the wavelength conversion material can be formed near a surface of the convex shape.
Public/Granted literature
- US20100099208A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2010-04-22
Information query
IPC分类: