Invention Grant
- Patent Title: Method of forming LED semiconductor device having annealed encapsulant layer and annealed luminescence conversion material layer
- Patent Title (中): 具有退火密封层和退火发光转换材料层的LED半导体器件的形成方法
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Application No.: US12380134Application Date: 2009-02-24
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Publication No.: US07955879B2Publication Date: 2011-06-07
- Inventor: YuSik Kim
- Applicant: YuSik Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2008-0042424 20080507
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00
Abstract:
In a method of forming an LED semiconductor device, and in an LED semiconductor device, an LED is provided on a substrate. A first encapsulant material layer is provided on the LED, and the first encapsulant material layer is firstly annealed. A luminescence conversion material layer is provided on the firstly annealed first encapsulant material layer, and the first encapsulant material layer and the luminescence conversion material layer and secondly annealed.
Public/Granted literature
- US20090278151A1 Light emitting diode packages, light emitting diode systems and methods of manufacturing the same Public/Granted day:2009-11-12
Information query
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