Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体器件及其制造方法
-
Application No.: US12491796Application Date: 2009-06-25
-
Publication No.: US07955910B2Publication Date: 2011-06-07
- Inventor: Osamu Nakamura
- Applicant: Osamu Nakamura
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2003-086425 20030326
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
An island-like interlayer insulating film is formed selectively in a region where a source interconnection and a gate interconnection intersect. For example, by use of ink jet method, a solution containing an insulating material is dropped on a region where the gate interconnection and the source interconnection intersect or a region where a holding capacitor is formed, that enable to reduce a photolithography process and to reduce the number of masks that are used in a TFT.
Public/Granted literature
- US20090325376A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2009-12-31
Information query
IPC分类:
