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US07955916B2 Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method 有权
通过该方法获得的制造半导体装置和半导体装置的方法，制造薄膜晶体管基板和薄膜晶体管基板的方法，以及通过该方法获得的制造显示装置和显示装置的方法

  • Patent Title: Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
  • Patent Title (中): 通过该方法获得的制造半导体装置和半导体装置的方法，制造薄膜晶体管基板和薄膜晶体管基板的方法，以及通过该方法获得的制造显示装置和显示装置的方法
  • Application No.: US12121398
    Application Date: 2008-05-15
  • Publication No.: US07955916B2
    Publication Date: 2011-06-07
  • Inventor: Naoki Hayashi , Toshiaki Arai
  • Applicant: Naoki Hayashi , Toshiaki Arai
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2007-132784 20070518
  • Main IPC: H01L21/84
  • IPC: H01L21/84 ;  H01L21/336 ;  H01L29/786
Method for making semiconductor apparatus and semiconductor apparatus obtained by the method, method for making thin film transistor substrate and thin film transistor substrate obtained by the method, and method for making display apparatus and display apparatus obtained by the method
Abstract:
A method for making a semiconductor apparatus including the steps of: forming a laminate structure of an insulating film made of a metal oxide and a semiconductor thin film on a substrate; forming a light absorption layer on top of the laminate structure; and irradiating an energy beam of a wavelength capable of being absorbed by the light absorption layer on the light absorption layer and simultaneously crystallizing the insulating film and the semiconductor thin film by means of heat generated in the light absorption layer.
Abstract(Chinese):

一种制造半导体装置的方法，包括以下步骤：在基板上形成由金属氧化物和半导体薄膜构成的绝缘膜的叠层结构; 在层叠结构的顶部形成光吸收层; 并且将能够被光吸收层吸收的波长的能量束照射在光吸收层上，同时通过在光吸收层中产生的热而使绝缘膜和半导体薄膜结晶。

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IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/84 .....衬底不是半导体的，例如绝缘体
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