Structure and method of fabricating FinFET

Invention Grant

US07955928B2 Structure and method of fabricating FinFET 有权

Title translation: FinFET的结构和方法

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Patent Title: Structure and method of fabricating FinFET
Patent Title (中): FinFET的结构和方法
Application No.: US12413836

Application Date: 2009-03-30
Publication No.: US07955928B2

Publication Date: 2011-06-07
Inventor: Kevin K. Chan , Zhibin Ren , Xinhui Wang
Applicant: Kevin K. Chan , Zhibin Ren , Xinhui Wang
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agency: Roberts Mlotkowski Safran & Cole, P.C.
Agent Joseph P. Abate
Main IPC: H01L21/8242
IPC: H01L21/8242

Structure and method of fabricating FinFET

Abstract:

A CMOS FinFET device and a method of manufacturing the same using a three dimensional doping process is provided. The method of forming the CMOS FinFET includes forming fins on a first side and a second side of a structure and forming spacers of a dopant material having a first dopant type on the fins on the first side of the structure. The method further includes annealing the dopant material such that the first dopant type diffuses into the fins on the first side of the structure. The method further includes protecting the first dopant type from diffusing into the fins on the second side of the structure during the annealing.

Abstract(Chinese):

提供了一种使用三维掺杂工艺的CMOS FinFET器件及其制造方法。形成CMOS FinFET的方法包括在结构的第一侧和第二侧上形成翅片，并且在结构的第一侧的翅片上形成具有第一掺杂剂类型的掺杂剂材料的间隔物。该方法还包括退火掺杂剂材料，使得第一掺杂剂类型扩散到结构的第一侧上的翅片。该方法还包括在退火期间保护第一掺杂剂类型不扩散到结构的第二侧上的翅片。

Public/Granted literature

US20100244103A1 STRUCTURE AND METHOD OF FABRICATING FINFET Public/Granted day:2010-09-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）