Invention Grant
- Patent Title: Method of forming a semiconductor device having an active area and a termination area
- Patent Title (中): 形成具有有源区和终端区的半导体器件的方法
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Application No.: US12522036Application Date: 2007-01-10
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Publication No.: US07955929B2Publication Date: 2011-06-07
- Inventor: Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
- Applicant: Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2007/000582 WO 20070110
- International Announcement: WO2008/084278 WO 20080717
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/425
Abstract:
A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
Public/Granted literature
- US20100001344A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE Public/Granted day:2010-01-07
Information query
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