Invention Grant
- Patent Title: High voltage sensor device and method therefor
- Patent Title (中): 高压传感器装置及其方法
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Application No.: US12570300Application Date: 2009-09-30
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Publication No.: US07955943B2Publication Date: 2011-06-07
- Inventor: Jefferson W. Hall , Mohammed Tanvir Quddus , Richard S. Burton , Kazunori Oikawa , George Chang
- Applicant: Jefferson W. Hall , Mohammed Tanvir Quddus , Richard S. Burton , Kazunori Oikawa , George Chang
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
In one embodiment, a high voltage element is formed overlying a doped semiconductor region that can be depleted during the operation of the high voltage element includes a conductor overlying a space in a resistor.
Public/Granted literature
- US20100022064A1 HIGH VOLTAGE SENSOR DEVICE AND METHOD THEREFOR Public/Granted day:2010-01-28
Information query
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