Invention Grant
- Patent Title: Crackstop structures and methods of making same
- Patent Title (中): 裂缝结构及其制作方法
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Application No.: US12174994Application Date: 2008-07-17
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Publication No.: US07955952B2Publication Date: 2011-06-07
- Inventor: Xiao Hu Liu , Chih-Chao Yang , Haining Sam Yang
- Applicant: Xiao Hu Liu , Chih-Chao Yang , Haining Sam Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Ian D. MacKinnon
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L21/00

Abstract:
An integrated circuit chip and a method of fabricating an integrated circuit chip. The integrated circuit chip includes: a continuous first stress ring proximate to a perimeter of the integrated circuit chip, respective edges of the first stress ring parallel to respective edges of the integrated circuit chip; a continuous second stress ring between the first stress ring and the perimeter of the integrated circuit chip, respective edges the second stress ring parallel to respective edges of the integrated circuit chip, the first and second stress rings having opposite internal stresses; a continuous gap between the first stress ring and the second stress ring; and a set of wiring levels from a first wiring level to a last wiring level on the substrate.
Public/Granted literature
- US20100013043A1 CRACKSTOP STRUCTURES AND METHODS OF MAKING SAME Public/Granted day:2010-01-21
Information query
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