Invention Grant
- Patent Title: Method of light induced plating on semiconductors
- Patent Title (中): 半导体光诱导电镀方法
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Application No.: US12456790Application Date: 2009-06-23
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Publication No.: US07955977B2Publication Date: 2011-06-07
- Inventor: Gary Hamm , David L. Jacques
- Applicant: Gary Hamm , David L. Jacques
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee: Rohm and Haas Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent John J. Piskorski
- Main IPC: H01L21/68
- IPC: H01L21/68
Abstract:
Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.
Public/Granted literature
- US20100003817A1 Method of light induced plating on semiconductors Public/Granted day:2010-01-07
Information query
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