Invention Grant
- Patent Title: Enhanced method of forming nickel silicides
- Patent Title (中): 增强硅化镍的方法
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Application No.: US12868535Application Date: 2010-08-25
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Publication No.: US07955978B2Publication Date: 2011-06-07
- Inventor: John P. Cahalen , Gary Hamm , George R. Allardyce , David L. Jacques
- Applicant: John P. Cahalen , Gary Hamm , George R. Allardyce , David L. Jacques
- Applicant Address: US MA Marlborough
- Assignee: Rohm and Hass Electronic Materials LLC
- Current Assignee: Rohm and Hass Electronic Materials LLC
- Current Assignee Address: US MA Marlborough
- Agent John J. Piskorski
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
Silicon containing substrates are coated with nickel. The nickel is coated with a protective layer and the combination is heated to a sufficient temperature to form nickel silicide. The nickel silicide formation may be performed in oxygen containing environments.
Public/Granted literature
- US20110065274A1 ENHANCED METHOD OF FORMING NICKEL SILICIDES Public/Granted day:2011-03-17
Information query
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