Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12543128Application Date: 2009-08-18
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Publication No.: US07955980B2Publication Date: 2011-06-07
- Inventor: Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
- Applicant: Toshiyuki Takewaki , Manabu Iguchi , Daisuke Oshida , Hironori Toyoshima , Masayuki Hiroi , Takuji Onuma , Hiroaki Nanba , Ichiro Honma , Mieko Hasegawa , Yasuaki Tsuchiya , Toshiji Taiji , Takaharu Kunugi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2006-331965 20061208
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A post-CMP cleaning process of a copper layer is to be performed as follows. An alkaline aqueous solution, a polycarboxylic acid, BTA, and an alkaline aqueous solution are sequentially brought into contact with a primary surface of a silicon substrate over which the copper layer is provided.
Public/Granted literature
- US20090305496A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2009-12-10
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