Method for smoothing wafer surface and apparatus used therefor

Invention Grant

US07955982B2 Method for smoothing wafer surface and apparatus used therefor 有权

Title translation: 晶圆表面平滑的方法及其使用的装置

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Patent Title: Method for smoothing wafer surface and apparatus used therefor
Patent Title (中): 晶圆表面平滑的方法及其使用的装置
Application No.: US12161070

Application Date: 2007-01-17
Publication No.: US07955982B2

Publication Date: 2011-06-07
Inventor: Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata , Kazushige Takaishi
Applicant: Takeo Katoh , Tomohiro Hashii , Katsuhiko Murayama , Sakae Koyata , Kazushige Takaishi
Applicant Address: JP Tokyo
Assignee: Sumco Corporation
Current Assignee: Sumco Corporation
Current Assignee Address: JP Tokyo
Agency: Greenblum & Bernstein, P.L.C.
Priority: JP2006-012188 20060120; JP2007-002661 20070110
International Application: PCT/JP2007/050582 WO 20070117
International Announcement: WO2007/083656 WO 20070726
Main IPC: H01L21/311
IPC: H01L21/311

Method for smoothing wafer surface and apparatus used therefor

Abstract:

Disclosed is a method for smoothing the surface of at least one side of a wafer which is obtained by slicing a semiconductor ingot. In this method, a fluid is applied according to projections of the wafer surface, thereby reducing the projections. Alternatively, a fluid is applied over the wafer surface, thereby smoothing the entire surface of the wafer while reducing the projections in the wafer surface.

Abstract(Chinese):

公开了一种通过切割半导体晶锭获得的晶片的至少一侧的表面的平滑化方法。在该方法中，根据晶片表面的突起施加流体，从而减少突起。或者，将流体施加在晶片表面上，从而使晶片的整个表面平滑，同时减少晶片表面中的突起。

Public/Granted literature

US20100151597A1 METHOD FOR SMOOTHING WAFER SURFACE AND APPARATUS USED THEREFOR Public/Granted day:2010-06-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀