Texturing semiconductor substrates

Invention Grant

US07955989B2 Texturing semiconductor substrates 有权

Title translation: 纹理半导体衬底

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Patent Title: Texturing semiconductor substrates
Patent Title (中): 纹理半导体衬底
Application No.: US12887873

Application Date: 2010-09-22
Publication No.: US07955989B2

Publication Date: 2011-06-07
Inventor: Robert K. Barr , Corey O'Connor
Applicant: Robert K. Barr , Corey O'Connor
Applicant Address: US MA Marlborough
Assignee: Rohm and Haas Electronic Materials LLC
Current Assignee: Rohm and Haas Electronic Materials LLC
Current Assignee Address: US MA Marlborough
Agent John J. Piskorski
Main IPC: H01L21/461
IPC: H01L21/461 ; H01L31/00 ; C25F3/00 ; C11D7/32

Abstract:

Semiconductors are textured with aqueous solutions containing non-volatile alkoxylated glycols, their ethers and ether acetate derivatives having molecular weights of 170 or greater and flash points of 75° C. or greater. The textured semiconductors can be used in the manufacture of photovoltaic devices.

Abstract(Chinese):

半导体用含有非挥发性烷氧基化二醇，其醚和醚乙酸酯衍生物的水溶液织构化，分子量为170以上，闪点为75℃以上。有纹理的半导体可用于制造光伏器件。

Public/Granted literature

US20110081742A1 TEXTURING SEMICONDUCTOR SUBSTRATES Public/Granted day:2011-04-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割