Invention Grant
US07955993B2 Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition
有权
氧气等离子体还原以消除BPTEOS薄膜沉积中的前体溢出
- Patent Title: Oxygen plasma reduction to eliminate precursor overflow in BPTEOS film deposition
- Patent Title (中): 氧气等离子体还原以消除BPTEOS薄膜沉积中的前体溢出
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Application No.: US12478493Application Date: 2009-06-04
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Publication No.: US07955993B2Publication Date: 2011-06-07
- Inventor: Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
- Applicant: Chin Kun Lan , Sheng-Wen Chen , Hung Jui Chang , Yu-Ku Lin , Ying-Lang Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Tung & Associates
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A method including providing a semiconductor substrate in a reaction chamber; flowing a first reactant including silicon and oxygen, a boron dopant and a phosphorus dopant into the reaction chamber so that a layer of BPTEOS is deposited on the semiconductor substrate; stopping the flow of the first reactant, boron dopant and phosphorus dopant into the reaction chamber and so that a phosphorus dopant and boron dopant rich film is deposited over the layer of BPTEOS; and reducing the film comprising exposing the film to an O2 plasma.
Public/Granted literature
- US20100311252A1 OXYGEN PLASMA REDUCTION TO ELIMINATE PRECURSOR OVERFLOW IN BPTEOS FILM DEPOSITION Public/Granted day:2010-12-09
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