Invention Grant
US07955995B2 Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film 有权
非易失性半导体存储器件及其制造方法,半导体器件及其制造方法以及绝缘膜的制造方法

Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
Abstract:
An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×1011 cm−3 or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.
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