Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film
- Patent Title (中): 非易失性半导体存储器件及其制造方法,半导体器件及其制造方法以及绝缘膜的制造方法
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Application No.: US11802093Application Date: 2007-05-18
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Publication No.: US07955995B2Publication Date: 2011-06-07
- Inventor: Tetsuya Kakehata , Tetsuhiro Tanaka , Yoshinobu Asami
- Applicant: Tetsuya Kakehata , Tetsuhiro Tanaka , Yoshinobu Asami
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2006-147467 20060526
- Main IPC: H01L21/26
- IPC: H01L21/26

Abstract:
An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×1011 cm−3 or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.
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