Invention Grant
- Patent Title: Donor substrate and method of manufacturing display
- Patent Title (中): 供体基板和制造方法显示
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Application No.: US12489640Application Date: 2009-06-23
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Publication No.: US07956008B2Publication Date: 2011-06-07
- Inventor: Tomoyuki Higo , Keisuke Matsuo
- Applicant: Tomoyuki Higo , Keisuke Matsuo
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2008-165971 20080625; JP2008-313105 20081209
- Main IPC: B41M5/035
- IPC: B41M5/035 ; B41M5/46 ; B41M5/50

Abstract:
The present invention provides a donor substrate used in forming a light emitting layer by forming a transfer layer containing light emission material, irradiating a radiation ray to the transfer layer while the transfer layer and a substrate to be transferred face each other, and sublimating or vaporizing the transfer layer so that the transfer layer is transferred to the substrate to be transferred. The donor substrate includes: a base; a photothermal conversion layer arranged on the base; and a heat interfering layer arranged between the base and the photothermal conversion layer, and including two or more layers with refraction index different from each other.
Public/Granted literature
- US20090325451A1 DONOR SUBSTRATE AND METHOD OF MANUFACTURING DISPLAY Public/Granted day:2009-12-31
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