Invention Grant
US07956345B2 CNT devices, low-temperature fabrication of CNT and CNT photo-resists
有权
CNT器件,低温制造CNT和CNT光刻胶
- Patent Title: CNT devices, low-temperature fabrication of CNT and CNT photo-resists
- Patent Title (中): CNT器件,低温制造CNT和CNT光刻胶
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Application No.: US12008992Application Date: 2008-01-14
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Publication No.: US07956345B2Publication Date: 2011-06-07
- Inventor: Shanzhong Wang , Mui Hoon Nai , Zhonglin Miao
- Applicant: Shanzhong Wang , Mui Hoon Nai , Zhonglin Miao
- Applicant Address: SG Singapore
- Assignee: STMicroelectronics Asia Pacific Pte. Ltd.
- Current Assignee: STMicroelectronics Asia Pacific Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agent Lisa K. Jorgenson; William A. Munck
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst.
Public/Granted literature
- US20080203380A1 CNT devices, low-temperature fabrication of CTN and CNT photo-resists Public/Granted day:2008-08-28
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