Invention Grant
- Patent Title: High efficiency light emitting diode (LED)
- Patent Title (中): 高效率发光二极管（LED）
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Application No.: US11608439Application Date: 2006-12-08
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Publication No.: US07956371B2Publication Date: 2011-06-07
- Inventor: Steven P. DenBaars , Shuji Nakamura , James S. Speck
- Applicant: Steven P. DenBaars , Shuji Nakamura , James S. Speck
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/38
- IPC: H01L33/38
Abstract:
An (Al, Ga, In)N light emitting diode (LED), wherein light extraction from chip and/or phosphor conversion layer is optimized. By novel shaping of LED and package optics, a high efficiency light emitting diode is achieved.
Public/Granted literature
- US20070145397A1 HIGH EFFICIENCY LIGHT EMITTING DIODE (LED) Public/Granted day:2007-06-28
Information query
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