Invention Grant
- Patent Title: Semiconductor light-emitting device
- Patent Title (中): 半导体发光装置
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Application No.: US12128394Application Date: 2008-05-28
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Publication No.: US07956374B2Publication Date: 2011-06-07
- Inventor: Shu-Wei Chiu
- Applicant: Shu-Wei Chiu
- Applicant Address: TW Taichung
- Assignee: HUGA Optotech Inc.
- Current Assignee: HUGA Optotech Inc.
- Current Assignee Address: TW Taichung
- Agency: Jianq Chyun IP Office
- Priority: TW96132464A 20070831
- Main IPC: H01L33/00
- IPC: H01L33/00

Abstract:
The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.
Public/Granted literature
- US20090057702A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE Public/Granted day:2009-03-05
Information query
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