Invention Grant
- Patent Title: Circuit for protecting a transistor during the manufacture of an integrated circuit device
- Patent Title (中): 用于在制造集成电路器件期间保护晶体管的电路
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Application No.: US12847957Application Date: 2010-07-30
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Publication No.: US07956385B1Publication Date: 2011-06-07
- Inventor: Yuhao Luo , Shuxian Wu , Xin X. Wu , Jae-Gyung Ahn , Deepak K. Nayak , Daniel Gitlin
- Applicant: Yuhao Luo , Shuxian Wu , Xin X. Wu , Jae-Gyung Ahn , Deepak K. Nayak , Daniel Gitlin
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent John J. King
- Main IPC: H01L23/525
- IPC: H01L23/525

Abstract:
A circuit for protecting a transistor during the manufacture of an integrated circuit device is disclosed. The circuit comprises a transistor having a gate formed over an active region formed in a die of the integrated circuit device; a protection element formed in the die of the integrated circuit device; and a programmable interconnect coupled between the gate of the transistor and the protection element, the programmable interconnect enabling the protection element to be decoupled from the transistor.
Information query
IPC分类: