Invention Grant
- Patent Title: Capacitor of semiconductor device and method of fabricating the same
- Patent Title (中): 半导体器件的电容器及其制造方法
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Application No.: US12492102Application Date: 2009-06-25
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Publication No.: US07956398B2Publication Date: 2011-06-07
- Inventor: Ki Min Lee
- Applicant: Ki Min Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney; Duangkamol Kay Strohl
- Priority: KR10-2005-0102124 20051028
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94 ; H01L29/76 ; H01L31/119
Abstract:
Disclosed are a capacitor of a semiconductor device and a method of fabricating the same. The capacitor includes a capacitor top electrode, a capacitor bottom electrode aligned with a bottom surface and three lateral sides of the capacitor top electrode, and a capacitor insulating layer between the capacitor top electrode and the capacitor bottom electrode.
Public/Granted literature
- US20090256238A1 Capacitor of Semiconductor Device and Method of Fabricating the Same Public/Granted day:2009-10-15
Information query
IPC分类:
