Invention Grant
- Patent Title: MIM capacitor integration
- Patent Title (中): MIM电容集成
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Application No.: US12304194Application Date: 2006-06-15
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Publication No.: US07956400B2Publication Date: 2011-06-07
- Inventor: Brad Smith
- Applicant: Brad Smith
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- International Application: PCT/IB2006/054677 WO 20060615
- International Announcement: WO2008/010028 WO 20080124
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
An integrated metal-insulator-metal capacitor is formed so that there is an extension portion of its top plate that does not face any portion of the bottom plate, and an extension portion of its bottom plate that does not face any portion of the top plate. Vias connecting the MIM capacitor plates to conductors in an overlying metallization layer are formed so as to contact the extension portions of the top and bottom plates. Etching of the via holes is simplified because it is permissible for the via holes to punch through the extension portions of the capacitor plates. The bottom plate of the MIM capacitor is inlaid. The top plate of the MIM capacitor may be inlaid.
Public/Granted literature
- US20090200638A1 MIM CAPACITOR INTEGRATION Public/Granted day:2009-08-13
Information query
IPC分类:
