Invention Grant
- Patent Title: Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same
- Patent Title (中): 具有使用高介电常数栅极绝缘膜的场效应晶体管的半导体器件及其制造方法
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Application No.: US12478252Application Date: 2009-06-04
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Publication No.: US07956413B2Publication Date: 2011-06-07
- Inventor: Yoshinao Harada , Shigenori Hayashi , Masaaki Niwa
- Applicant: Yoshinao Harada , Shigenori Hayashi , Masaaki Niwa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-362971 20041215
- Main IPC: H01L29/94
- IPC: H01L29/94

Abstract:
In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.
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