Invention Grant
- Patent Title: Semiconductor substrate, semiconductor device, method for manufacturing semiconductor substrate, and method for manufacturing semiconductor device
- Patent Title (中): 半导体衬底，半导体器件，半导体衬底的制造方法以及半导体器件的制造方法
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Application No.: US12075073Application Date: 2008-03-06
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Publication No.: US07956414B2Publication Date: 2011-06-07
- Inventor: Juri Kato
- Applicant: Juri Kato
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Nutter McClennen & Fish LLP
- Agent John J. Penny, Jr.; Christina M. Sperry
- Priority: JP2004-222996 20040730
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A semiconductor substrate comprising: a semiconductor base; dielectric layers of mutually different film thicknesses formed on the semiconductor base; and semiconductor layers of mutually different film thicknesses formed on the dielectric layers.
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