Trench IGBT with depletion stop layer

Invention Grant

US07956419B2 Trench IGBT with depletion stop layer 有权

Title translation: 具有耗尽阻挡层的沟槽IGBT

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Patent Title: Trench IGBT with depletion stop layer
Patent Title (中): 具有耗尽阻挡层的沟槽IGBT
Application No.: US11265489

Application Date: 2005-11-02
Publication No.: US07956419B2

Publication Date: 2011-06-07
Inventor: Richard Francis , Chiu Ng
Applicant: Richard Francis , Chiu Ng
Applicant Address: US CA El Segundo
Assignee: International Rectifier Corporation
Current Assignee: International Rectifier Corporation
Current Assignee Address: US CA El Segundo
Agency: Farjami & Farjami LLP
Main IPC: H01L23/62
IPC: H01L23/62

Abstract:

A very low VCEON non punch through trench IGBT built-in non-epitaxial float zone silicon has a depletion stop layer structure added to its bottom surface.

Abstract(Chinese):

非常低的VCEON非穿通沟槽IGBT内置非外延浮区硅在其底表面上添加有耗尽阻挡层结构。

Public/Granted literature

US20070096167A1 Trench IGBT with depletion stop layer Public/Granted day:2007-05-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/58	.其他组不包含的，用于半导体器件的电结构装置
H01L23/62	..防过电流或过电负荷保护装置，例如熔丝、分路器