Invention Grant
- Patent Title: Lanthanide dielectric with controlled interfaces
- Patent Title (中): 具有受控界面的镧系元素电介质
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Application No.: US12655812Application Date: 2010-01-07
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Publication No.: US07956426B2Publication Date: 2011-06-07
- Inventor: Arup Bhattacharyya
- Applicant: Arup Bhattacharyya
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L31/119
- IPC: H01L31/119 ; H01L21/20
Abstract:
Methods and devices for a dielectric are provided. One method embodiment includes forming a passivation layer on a substrate, wherein the passivation layer contains a composition of silicon, oxygen, and nitrogen. The method also includes forming a lanthanide dielectric film on the passivation layer, and forming an encapsulation layer on the lanthanide dielectric film.
Public/Granted literature
- US20100109068A1 Lanthanide dielectric with controlled interfaces Public/Granted day:2010-05-06
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