Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12370171Application Date: 2009-02-12
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Publication No.: US07956435B2Publication Date: 2011-06-07
- Inventor: Tomohiro Kamimura
- Applicant: Tomohiro Kamimura
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2008-062288 20080312
- Main IPC: H01L31/00
- IPC: H01L31/00 ; H01L21/00

Abstract:
In recent years, as electronic equipment becomes thinner, an area for mounting a semiconductor device used in the electronic equipment is required to be smaller, and a thickness of an encapsulating resin for encapsulating a semiconductor substrate having a circuit formed thereon and the like also becomes smaller. The encapsulating resin is marked with a product number, a manufacturer name, or the like. There arises a problem in that, in the marking, an infrared laser beam applied to the encapsulating resin passes through the encapsulating resin, generates heat in the semiconductor substrate, and destructs the formed circuit. By providing a thin film for refracting the infrared laser beam on a rear surface of the semiconductor substrate, the optical path of the infrared laser beam is made longer to reduce heat generated in the semiconductor substrate.
Public/Granted literature
- US20090230539A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-09-17
Information query
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