Invention Grant
- Patent Title: Method of increasing the area of a useful layer of material transferred onto a support
- Patent Title (中): 增加转移到载体上的有用材料层的面积的方法
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Application No.: US11858164Application Date: 2007-09-20
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Publication No.: US07956441B2Publication Date: 2011-06-07
- Inventor: Christophe Maleville
- Applicant: Christophe Maleville
- Applicant Address: FR Bernin
- Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee: S.O.I.Tec Silicon on Insulator Technologies
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR0209020 20020717
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A composite structure that includes front faces of the first and second substrates that are molecularly bonded to each other. The dimensions of the second substrate outline are larger than the first substrate outline, and a peripheral side of the second substrate substantially borders the second front face and is oriented generally perpendicularly with respect thereto. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extending around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, has a maximum width of less than about 0.5 mm.
Public/Granted literature
- US20080006909A1 METHOD OF INCREASING THE AREA OF A USEFUL LAYER OF MATERIAL TRANSFERRED ONTO A SUPPORT Public/Granted day:2008-01-10
Information query
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