Invention Grant
US07956446B2 Semiconductor device and method 有权
半导体器件及方法

Semiconductor device and method
Abstract:
A chip carrier includes first, second and third layers with the second layer situated between the first and third layers. The first and third layers are formed of a first material and the second layer is formed of a second material. The second layer has a plurality of holes extending therethrough and the first material fills the holes.
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