Invention Grant
- Patent Title: Sputtering target and semiconductor device manufactured using the same
- Patent Title (中): 溅射靶和使用其制造的半导体器件
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Application No.: US12573437Application Date: 2009-10-05
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Publication No.: US07956464B2Publication Date: 2011-06-07
- Inventor: Taek-jung Kim , Hee-sook Park , Jong-min Back , Su-kyoung Kim , Yu-gyun Shin , Sun-ghil Lee
- Applicant: Taek-jung Kim , Hee-sook Park , Jong-min Back , Su-kyoung Kim , Yu-gyun Shin , Sun-ghil Lee
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0040326 20090508
- Main IPC: H01L23/532
- IPC: H01L23/532
Abstract:
A sputtering target includes a tungsten (W)-nickel (Ni) alloy, wherein the nickel (Ni) is present in an amount of between about 0.01 weight % and about 1 weight %.
Public/Granted literature
- US20100283154A1 SPUTTERING TARGET AND SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME Public/Granted day:2010-11-11
Information query
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