Invention Grant
- Patent Title: Integrated circuit and method for manufacturing an integrated circuit
- Patent Title (中): 用于制造集成电路的集成电路和方法
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Application No.: US12189549Application Date: 2008-08-11
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Publication No.: US07956493B2Publication Date: 2011-06-07
- Inventor: Dirk Hesidenz , Markus Klaus Unger
- Applicant: Dirk Hesidenz , Markus Klaus Unger
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H02J1/10
- IPC: H02J1/10 ; H04B3/28
Abstract:
One or more embodiments of the invention relate to an integrated circuit including a first power supply domain and at least a second power supply domain. Furthermore, the integrated circuit includes a radio frequency element connected between the first power supply domain and the second power supply domain.
Public/Granted literature
- US20100033269A1 Integrated Circuit and Method for Manufacturing an Integrated Circuit Public/Granted day:2010-02-11
Information query
