Invention Grant
US07956517B1 MEMS structure having a stress inverter temperature-compensated resonator member
有权
具有应力逆变器温度补偿谐振器构件的MEMS结构
- Patent Title: MEMS structure having a stress inverter temperature-compensated resonator member
- Patent Title (中): 具有应力逆变器温度补偿谐振器构件的MEMS结构
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Application No.: US12204713Application Date: 2008-09-04
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Publication No.: US07956517B1Publication Date: 2011-06-07
- Inventor: Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
- Applicant: Mehrnaz Motiee , Roger T. Howe , Emmanuel P. Quevy , David H. Bernstein
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories
- Current Assignee: Silicon Laboratories
- Current Assignee Address: US TX Austin
- Agency: O'Keefe, Egan, Peterman & Enders LLP
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A MEMS structure having a temperature-compensated resonator member is described. The MEMS structure comprises an asymmetric stress inverter member coupled with a substrate. A resonator member is housed in the asymmetric stress inverter member and is suspended above the substrate. The asymmetric stress inverter member is used to alter the thermal coefficient of frequency of the resonator member by inducing a stress on the resonator member in response to a change in temperature.
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