Invention Grant
US07957167B2 Semiconductor element drive device with level shift circuit and apparatus including the same 有权
具有电平移位电路的半导体元件驱动装置及其装置

Semiconductor element drive device with level shift circuit and apparatus including the same
Abstract:
A high-reliability IGBT drive device in which the high- and low-voltage side IGBTs are complementarily ON/OFF controlled before and after dead time. A reset pulse that turns OFF the high-voltage side IGBT is generated during the dead time as described in the following example. The reset pulse is generated immediately before an ON instruction for the low-voltage side IGBT, so that a period that begins immediately before the ON instruction for the low-voltage side IGBT and overlaps with the ON instruction, continuously during the dead time, continuously during dead time immediately before the low-voltage side IGBT turns ON, or in such a manner as to invalidate the ON instruction for the low-voltage side IGBT when an ON state of the high-voltage side IGBT is observed.
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