Invention Grant
- Patent Title: Semiconductor element drive device with level shift circuit and apparatus including the same
- Patent Title (中): 具有电平移位电路的半导体元件驱动装置及其装置
-
Application No.: US11802746Application Date: 2007-05-24
-
Publication No.: US07957167B2Publication Date: 2011-06-07
- Inventor: Koji Yamaguchi , Naoki Sakurai
- Applicant: Koji Yamaguchi , Naoki Sakurai
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2006-145031 20060525
- Main IPC: H02M7/5387
- IPC: H02M7/5387

Abstract:
A high-reliability IGBT drive device in which the high- and low-voltage side IGBTs are complementarily ON/OFF controlled before and after dead time. A reset pulse that turns OFF the high-voltage side IGBT is generated during the dead time as described in the following example. The reset pulse is generated immediately before an ON instruction for the low-voltage side IGBT, so that a period that begins immediately before the ON instruction for the low-voltage side IGBT and overlaps with the ON instruction, continuously during the dead time, continuously during dead time immediately before the low-voltage side IGBT turns ON, or in such a manner as to invalidate the ON instruction for the low-voltage side IGBT when an ON state of the high-voltage side IGBT is observed.
Public/Granted literature
Information query
IPC分类: