Invention Grant
US07957207B2 Programmable resistance memory with interface circuitry for providing read information to external circuitry for processing
有权
具有接口电路的可编程电阻存储器，用于向外部电路提供读取信息以进行处理
- Patent Title: Programmable resistance memory with interface circuitry for providing read information to external circuitry for processing
- Patent Title (中): 具有接口电路的可编程电阻存储器，用于向外部电路提供读取信息以进行处理
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Application No.: US12381259Application Date: 2009-03-10
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Publication No.: US07957207B2Publication Date: 2011-06-07
- Inventor: Ward Parkinson
- Applicant: Ward Parkinson
- Applicant Address: US MI Troy
- Assignee: Ovonyx, Inc.
- Current Assignee: Ovonyx, Inc.
- Current Assignee Address: US MI Troy
- Agent Kevin L. Bray
- Main IPC: G11C7/00
- IPC: G11C7/00
Abstract:
A memory includes an interface through which it provides access to memory cells, such as phase change memory cells. Such access permits circuitry located on a separate integrated circuit to provide access signals, including read and write signals suitable for binary or multi-level accesses.
Public/Granted literature
- US20100232205A1 Programmable resistance memory Public/Granted day:2010-09-16
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