Invention Grant
- Patent Title: Method for producing semiconductor wafer
- Patent Title (中): 半导体晶片的制造方法
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Application No.: US11665977Application Date: 2005-11-02
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Publication No.: US07959731B2Publication Date: 2011-06-14
- Inventor: Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
- Applicant: Isao Yokokawa , Hiroji Aga , Kiyoshi Mitani
- Applicant Address: JP Tokyo
- Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee: Shin-Etsu Handotai Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2004-326156 20041110
- International Application: PCT/JP2005/020185 WO 20051102
- International Announcement: WO2006/051730 WO 20060518
- Main IPC: C30B25/22
- IPC: C30B25/22
Abstract:
A method for producing a semiconductor wafer, including epitaxially growing a Si1-XGeX layer (0
Public/Granted literature
- US20080138959A1 Method For Producing Semiconductor Wafer Public/Granted day:2008-06-12
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