Invention Grant
- Patent Title: Method of removing photoresist and method of manufacturing a semiconductor device
- Patent Title (中): 去除光刻胶的方法和制造半导体器件的方法
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Application No.: US11984340Application Date: 2007-11-16
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Publication No.: US07959738B2Publication Date: 2011-06-14
- Inventor: Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
- Applicant: Dae-Hyuk Kang , Hyo-San Lee , Dong-Gyun Han , Chang-Ki Hong , Kun-Tack Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0113093 20061116
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.
Public/Granted literature
- US20080138972A1 Method of removing photoresist and method of manufacturing a semiconductor device Public/Granted day:2008-06-12
Information query
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