Invention Grant
US07959971B2 Film formation method with deposition source position control 有权
具有沉积源位置控制的成膜方法

Film formation method with deposition source position control
Abstract:
When a multiple-panel forming process for producing a plurality of panels on a large-size substrate is employed, when production thereof is continued over a long period, or in other cases, a predetermined film thickness distribution can be stably obtained according to a method of the present invention. Vapor deposition on a substrate is performed by evaporating particles from a vapor deposition source arranged opposite to the substrate in a vacuum chamber. By changing a distance between the substrate and an opening provided at the vapor deposition source by a vapor deposition source position control mechanism, change with elapse of time in the film thickness distribution of a thin film formed on the substrate is controlled.
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