Invention Grant
- Patent Title: Film formation method with deposition source position control
- Patent Title (中): 具有沉积源位置控制的成膜方法
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Application No.: US11691559Application Date: 2007-03-27
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Publication No.: US07959971B2Publication Date: 2011-06-14
- Inventor: Nobutaka Ukigaya
- Applicant: Nobutaka Ukigaya
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-098370 20060331; JP2007-074086 20070322
- Main IPC: C23C16/00
- IPC: C23C16/00

Abstract:
When a multiple-panel forming process for producing a plurality of panels on a large-size substrate is employed, when production thereof is continued over a long period, or in other cases, a predetermined film thickness distribution can be stably obtained according to a method of the present invention. Vapor deposition on a substrate is performed by evaporating particles from a vapor deposition source arranged opposite to the substrate in a vacuum chamber. By changing a distance between the substrate and an opening provided at the vapor deposition source by a vapor deposition source position control mechanism, change with elapse of time in the film thickness distribution of a thin film formed on the substrate is controlled.
Public/Granted literature
- US20070231460A1 FILM FORMATION METHOD Public/Granted day:2007-10-04
Information query
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